The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2022
Filed:
Dec. 25, 2020
Anhui University, Anhui, CN;
Changxin Memory Technologies, Inc., Hefei, CN;
Chunyu Peng, Hefei, CN;
Junlin Ge, Hefei, CN;
Jun He, Hefei, CN;
Zhan Ying, Hefei, CN;
Xin Li, Hefei, CN;
Kanyu Cao, Hefei, CN;
Wenjuan Lu, Hefei, CN;
Zhiting Lin, Hefei, CN;
Xiulong Wu, Hefei, CN;
Junning Chen, Hefei, CN;
ANHUI UNIVERSITY, Anhui, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
The present disclosure provides a sense amplifier, a memory, and a method for controlling a sense amplifier, relating to the technical field of semiconductor memories. The sense amplifier comprises: an amplification module; and a control module, electrically connected to the amplification module; wherein, in an offset compensation stage of the sense amplifier, the control module is used to configure the amplification module to comprise a diode structure, a current mirror structure, and an inverter with an input and an output connected together; and in a first amplification stage of the sense amplifier, the control module is used to configure the amplification module as an inverter. The present disclosure can realize the offset compensation of the sense amplifier, thereby improving the performance of semiconductor memories.