Hefei, China

Junlin Ge


Average Co-Inventor Count = 10.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2022-2024

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2 patents (USPTO):Explore Patents

Title: Junlin Ge: Innovator in Semiconductor Memory Technology

Introduction

Junlin Ge is a prominent inventor based in Hefei, China, known for his contributions to semiconductor memory technology. With a total of 2 patents, he has made significant advancements in the field, particularly in the design and control of sense amplifiers.

Latest Patents

Junlin Ge's latest patents include innovative designs for sense amplifiers and memory systems. One of his notable inventions is a sense amplifier that features an amplification module and a control module. This design allows for effective offset compensation during the reading of data from memory cells. The control module configures the amplification module to include various structures, such as diode structures and current mirror structures, enhancing the performance of semiconductor memories. Another patent focuses on a method for controlling a sense amplifier, which also aims to improve the efficiency and reliability of memory systems.

Career Highlights

Throughout his career, Junlin Ge has worked with esteemed organizations, including Anhui University and Changxin Memory Technologies, Inc. His experience in these institutions has allowed him to collaborate with other experts in the field and contribute to groundbreaking research in semiconductor technology.

Collaborations

Some of Junlin Ge's notable coworkers include Wenjuan Lu and Jun He. Their collaborative efforts have further advanced the research and development of memory technologies.

Conclusion

Junlin Ge's innovative work in semiconductor memory technology has positioned him as a key figure in the industry. His patents reflect a commitment to enhancing the performance and efficiency of memory systems, making significant contributions to the field.

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