The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 26, 2022

Filed:

Dec. 25, 2020
Applicants:

Anhui University, Anhui, CN;

Changxin Memory Technologies, Inc., Hefei, CN;

Inventors:

Chunyu Peng, Hefei, CN;

Zijian Wang, Hefei, CN;

Wenjuan Lu, Hefei, CN;

Xiulong Wu, Hefei, CN;

Jun He, Hefei, CN;

Xin Li, Hefei, CN;

Zhan Ying, Hefei, CN;

Kanyu Cao, Hefei, CN;

Zhiting Lin, Hefei, CN;

Junning Chen, Hefei, CN;

Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/02 (2006.01); G11C 7/08 (2006.01); H03K 19/20 (2006.01);
U.S. Cl.
CPC ...
G11C 7/08 (2013.01); H03K 19/20 (2013.01);
Abstract

The present disclosure provides a sense amplifier, a memory, and a method for controlling a sense amplifier, relating to the technical field of semiconductor memories. The sense amplifier comprises: an amplification module, configured to read data in a storage unit on a bit line or a storage unit on a reference bit line; and a first switch module, configured to control the amplification module to be disconnected from the reference bit line when the sense amplifier reads a first state for the bit line and the sense amplifier is in an amplification stage, and control the amplification module to be connected to the reference bit line when the sense amplifier reads a second state for the bit line and the sense amplifier is in the amplification stage. The present disclosure can reduce the power consumption of the sense amplifier.


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