The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

Mar. 01, 2023
Applicant:

Changxin Memory Technologies, Inc., Hefei, CN;

Inventor:

Kui Zhang, Hefei, CN;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 23/5226 (2013.01);
Abstract

A semiconductor structure includes: a base; a first conductive path including a first channel area and a first doped area and a second doped area located on two opposite ends of the first channel area; a first electrical connection structure located in the base and in contact with first doped area; a second electrical connection structure in contact with second doped area; a second conductive path including a second channel area and a third doped area and a fourth doped area located on two opposite ends of the second channel area, the third doped area being in contact with the side of the second electrical connection structure away from the base, and orthographic projection of the second conductive path on the base being at least partially non-overlapping with orthographic projection of the first conductive path on the base; and a gate structure surrounding first channel area and second channel area.


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