Indira P Seshadri

This inventor holds 74 USPTO granted patents and 10 published patent applications, primarily in Vertical Field Effect Transistors (CPC class H01L). Top assignees: International Business Machines Corporation, Elpis Technologies Inc., Screen Spe USA LLC. Active years: 2017-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Indira P Seshadri. Retrieved from https://idiyas.com/inventor/indira-p-seshadri

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 74 (Patent Applications = 10)

% Patents Active = 68.9

Average Co-Inventor Count = 4.6

ph-index = 5

Forward Citations = 95(Granted Patents)

Forward Citations (Not Self Cited) = 71(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Troy, NY (US) (2017 - 2021)
Albany, NY (US) (2019 - 2021)
Niskayuna, NY (US) (2019 - 2024)

Company Filing History:

73 out of 166,325

International Business Machines Corporation

patents

1 out of 52

Elpis Technologies Inc.

where one patent can have more than one assignee

Years Active: 2017-2026

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Areas of Expertise:

Vertical Field Effect Transistor

Semiconductor Devices

Contact Structure

Transistor Boundary Protection

Hybrid Diffusion Break

Dielectric Reflow

Low Dielectric Constant

Stacked GAA FET

Nanosheet Gap Fill

Fin-Cut-Last VTFET

Crystalline Semiconducting Channels

Power Rail Positioning

74 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12684802 - Forming crossbar and non-crossbar transistors on the same substrate (2026-07-14),

2. 12593668 - Shallow and deep contacts with stitching (2026-03-31),

3. 12550714 - Late middle-of-line gate cut with power bar formation (2026-02-10),

4. 12484296 - Fork sheet device with wrapped source and drain contact to prevent NFET to PFET contact shortage in a tight space (2025-11-25),

5. 12457762 - Cross bar vertical FETs (2025-10-28),

6. 12426320 - Vertically stacked fin semiconductor devices (2025-09-23),

7. 12374615 - Electronic devices with a low dielectric constant (2025-07-29),

8. 12362168 - Solvent annealing of an organic planarization layer (2025-07-15),

9. 12324236 - Bottom contact for stacked GAA FET (2025-06-03),

10. 12310100 - Dielectric reflow for boundary control (2025-05-20),

11. 12268026 - High aspect ratio contact structure with multiple metal stacks (2025-04-01),

12. 12107132 - Source/drain contact positioning under power rail (2024-10-01),

13. 12021135 - Bottom source/drain etch with fin-cut-last-VTFET (2024-06-25),

14. 12002856 - Vertical field effect transistor with crosslink fin arrangement (2024-06-04),

15. 11990342 - Metal cut patterning and etching to minimize interlayer dielectric layer loss (2024-05-21),

Title: The Innovative Journey of Indira P Seshadri

Introduction:

Indira P Seshadri is a pioneering inventor based in Troy, NY, USA, whose groundbreaking work has led to the successful filing of 62 patents in the field of semiconductor technology. Her dedication to innovation and commitment to excellence have established her as a leading figure in the world of inventions.

Latest Patents:

Among her latest patents is the "Bottom source/drain etch with fin-cut-last-VTFET", a revolutionary technique related to semiconductor devices. This patent involves the formation of epitaxial materials under fin channel regions, culminating in the creation of a bottom source/drain layer. Another notable invention is the "Vertical field effect transistor with crosslink fin arrangement", showcasing her expertise in semiconductor structure design.

Career Highlights:

Indira P Seshadri has made significant contributions to the industry through her tenure at renowned companies such as IBM (International Business Machines Corporation) and Elpis Technologies Inc. Her innovative spirit and technical prowess have propelled her to the forefront of technological advancement, earning her a reputation as a visionary inventor.

Collaborations:

Throughout her career, Indira P Seshadri has collaborated with accomplished professionals in the field, including Ekmini Anuja De Silva and Nelson M Felix. These collaborations have resulted in the development of cutting-edge technologies and the exploration of new frontiers in semiconductor research.

Conclusion:

Indira P Seshadri's remarkable journey as an inventor is a testament to her passion for innovation and her relentless pursuit of excellence. Her inventive prowess, combined with her collaborative spirit, has solidified her position as a trailblazer in the world of semiconductor technology, inspiring future generations to push the boundaries of what is possible in the realm of inventions.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

10 patents pending: