The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 25, 2025

Filed:

Dec. 21, 2022
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Shravana Kumar Katakam, Lehi, UT (US);

Tao Li, Slingerlands, NY (US);

Indira Seshadri, Niskayuna, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 84/85 (2025.01); H01L 23/50 (2006.01); H01L 23/522 (2006.01); H10D 30/01 (2025.01); H10D 62/13 (2025.01);
U.S. Cl.
CPC ...
H10D 84/85 (2025.01); H01L 23/50 (2013.01); H01L 23/5226 (2013.01); H10D 30/021 (2025.01); H10D 62/151 (2025.01);
Abstract

A microelectronic device includes a first source and drain structure adjacent to a second source and drain structure. A first conductive contact is in contact with a top surface and side surface of the first source and drain structure. A second conductive contact is in contact with a top surface and side surface of the second source and drain structure. The second conductive contact includes a via extension to connect to a backside component. A separating layer is located between the first conductive contact and the second conductive contact. A first sidewall of the separating layer is flush with the first conductive contact. A second sidewall of the separating layer is flush with the second conductive contact.


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