Shravana Kumar Katakam

This inventor holds 11 USPTO granted patents and 17 published patent applications. Top assignee: International Business Machines Corporation. Active years: 2025-2026.

USPTO Granted Patents = 11 (Patent Applications = 17)

% Patents Active = 63.6

Average Co-Inventor Count = 3.7

ph-index = 1

Forward Citations = 1(Granted Patents)

Company Filing History:

11 out of 166,325

International Business Machines Corporation

patents

Years Active: 2025-2026

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11 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12727472 - Tapered antifuse (2026-09-01),

2. 12701723 - Metal spacer 3D-MIM capacitor (2026-08-04),

3. 12685128 - Frontside to backside connection within double diffusion break (2026-07-14),

4. 12672535 - Enlarged shallow trench isolation for backside power (2026-06-30),

5. 12635514 - Metal insulator metal capacitor (MIM capacitor) (2026-05-19),

6. 12593615 - MRAM device with wrap-around top electrode contact (2026-03-31),

7. 12588277 - Forming wrap around contact with self-aligned backside contact (2026-03-24),

8. 12568772 - MRAM with a multi-component, multi-layer bottom electrode (2026-03-03),

9. 12550714 - Late middle-of-line gate cut with power bar formation (2026-02-10),

10. 12484296 - Fork sheet device with wrapped source and drain contact to prevent NFET to PFET contact shortage in a tight space (2025-11-25),

11. 12207561 - MRAM device with wrap-around top electrode (2025-01-21),

Title: Innovations by Shravana Kumar Katakam: Advancements in MRAM Technology

Introduction: Shravana Kumar Katakam, based in Lehi, UT, is an accomplished inventor known for his contributions to the field of semiconductor devices. His innovative work has led to the development of a significant patent focused on a Magnetic Random Access Memory (MRAM) device, showcasing his expertise and forward-thinking approach in technology.

Latest Patents: Katakam holds a patent for an MRAM device featuring a wrap-around top electrode. This invention introduces a semiconductor device that includes a magnetic tunnel junction (MTJ) stack, where an upper word line surrounds the vertical side surfaces of the MTJ stack. The design enhances the performance and efficiency of the MRAM devices by incorporating a dielectric encapsulation layer that surrounds the various components of the MTJ stack, including the top electrode, free layer, tunneling barrier, reference layer, and bottom electrode.

Career Highlights: Shravana Kumar Katakam is currently employed at International Business Machines Corporation (IBM), a global leader in technology and innovation. His role at IBM allows him to collaborate on cutting-edge projects that aim to push the boundaries of semiconductor technology and memory solutions.

Collaborations: Throughout his career, Katakam has had the opportunity to work alongside notable colleagues such as Ashim Dutta and Chih-Chao Yang. Their collaboration has contributed to the development of advanced technologies in the semiconductor field, demonstrating the importance of teamwork in driving innovation.

Conclusion: Shravana Kumar Katakam's patent for an MRAM device not only reflects his ingenuity but also paves the way for advancements in the semiconductor industry. With his ongoing contributions at IBM and collaborations with other talented professionals, Katakam is positioned to continue making significant strides in technology and innovation.