The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 19, 2026

Filed:

Jun. 14, 2023
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Chanro Park, Clifton Park, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Julien Frougier, Albany, NY (US);

Chih-Chao Yang, Glenmont, NY (US);

Ashim Dutta, Clifton Park, NY (US);

Shravana Kumar Katakam, Lehi, UT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10W 20/40 (2026.01);
U.S. Cl.
CPC ...
H10W 20/496 (2026.01);
Abstract

A semiconductor device including a metal insulator metal capacitor (MIM capacitor) within back end of line circuitry, where a bottom electrode of the MIM capacitor includes a plurality of vertical pillars extending up from a bottom layer. A semiconductor device including a metal insulator metal capacitor (MIM capacitor), where a bottom electrode of the MIM capacitor includes a plurality of vertical pillars extending up from a bottom layer. Forming back end of line Mx-1 metal line layer, forming a plurality of Vx-1 via on the Mx-1 metal line layer, forming Mx metal line layer with subtractive patterning on the plurality of the Vx-1 via, forming a plurality of Vx via on the Mx metal line layer with subtractive patterning; and forming a block mask protecting a portion of the semiconductor device.


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