The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2026
Filed:
Dec. 15, 2022
International Business Machines Corporation, Armonk, NY (US);
Shravana Kumar Katakam, Lehi, UT (US);
Ashim Dutta, Clifton Park, NY (US);
Chih-Chao Yang, Glenmont, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A magnetoresistive random access memory (MRAM) structure, a system, and a method of forming an MRAM structure. The MRAM structure may include a bottom electrode. The bottom electrode may include a diffusion barrier. The bottom electrode may further include a dielectric that surrounds one or more sidewalls of the diffusion barrier. The method may include depositing a first dielectric, where a metal component remains uncovered by the dielectric. The method may further include depositing a diffusion barrier on at least the metal component. The method may further include depositing an electrode layer on the first dielectric and the diffusion barrier, resulting in a bottom electrode comprising the electrode layer, the first dielectric, and the diffusion barrier.