International Business Machines Corporation

Shravana Kumar Katakam

Ruilong Xie

Chih-Chao Yang

Ashim Dutta

A microelectronic device includes a first source and drain structure adjacent to a second source and drain structure. A first conductive contact is in contact with a top surface and side surface of the first source and drain structure. A second conductive contact is in contact with a top surface and side surface of the second source and drain structure. The second conductive contact includes a via extension to connect to a backside component. A separating layer is located between the first conductive contact and the second conductive contact. A first sidewall of the separating layer is flush with the first conductive contact. A second sidewall of the separating layer is flush with the second conductive contact.

Fork sheet device with wrapped source and drain contact to prevent NFET to PFET contact shortage in a tight space

A semiconductor device including a magnetic tunnel junction (MTJ) stack and an upper word line of the MTJ stack surrounding vertical side surfaces of the MTJ stack. A semiconductor device including a magnetic tunnel junction (MTJ) stack and an upper word line for the MTJ stack surrounding vertical side surfaces and an upper surface of a reference layer of the MTJ stack. A method including forming a forming a magnetic tunnel junction (MTJ) stack and forming a dielectric encapsulation layer surrounding vertical side surfaces of a top electrode, a free layer, a tunneling barrier, a reference layer and a bottom electrode of the MTJ stack.

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Lehi, UT, United States of America

Shravana Kumar Katakam