The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 21, 2025

Filed:

Dec. 05, 2022
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Shravana Kumar Katakam, Lehi, UT (US);

Ashim Dutta, Clifton Park, NY (US);

Chih-Chao Yang, Glenmont, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/01 (2023.01); G11C 11/16 (2006.01); H01L 23/522 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H10N 50/01 (2023.02); G11C 11/161 (2013.01); G11C 11/1657 (2013.01); H01L 23/5226 (2013.01); H10B 61/00 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02);
Abstract

A semiconductor device including a magnetic tunnel junction (MTJ) stack and an upper word line of the MTJ stack surrounding vertical side surfaces of the MTJ stack. A semiconductor device including a magnetic tunnel junction (MTJ) stack and an upper word line for the MTJ stack surrounding vertical side surfaces and an upper surface of a reference layer of the MTJ stack. A method including forming a forming a magnetic tunnel junction (MTJ) stack and forming a dielectric encapsulation layer surrounding vertical side surfaces of a top electrode, a free layer, a tunneling barrier, a reference layer and a bottom electrode of the MTJ stack.


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