The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 24, 2026

Filed:

Jan. 18, 2023
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Shravana Kumar Katakam, Lehi, UT (US);

Tao Li, Slingerlands, NY (US);

Ruilong Xie, Niskayuna, NY (US);

Nicholas Anthony Lanzillo, Wynantskill, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 21/762 (2006.01); H01L 21/8238 (2006.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01);
U.S. Cl.
CPC ...
H10D 84/85 (2025.01); H01L 21/76224 (2013.01); H10D 84/0186 (2025.01); H10D 84/0188 (2025.01); H10D 84/038 (2025.01);
Abstract

One or more systems, devices, and/or methods of fabrication provided herein relate to reduced resistance between contacts and source/drain epis. According to one embodiment, a semiconductor device can comprise a source/drain region comprising a top portion, a sidewall portion and a bottom portion, a dielectric bar located adjacent to the source/drain region, and a contact in direct contact with the top portion, the sidewall portion and the bottom portion of the source/drain region and with the dielectric bar.


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