The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 04, 2024
Filed:
Mar. 07, 2023
International Business Machines Corporation, Armonk, NY (US);
Indira Seshadri, Niskayuna, NY (US);
Ruilong Xie, Niskayuna, NY (US);
Chen Zhang, Guilderland, NY (US);
Ekmini Anuja De Silva, Slingerlands, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of forming a semiconductor structure includes forming a first array of mandrels on a hardmask layer disposed on an uppermost surface of a semiconductor substrate. First sidewall image transfer spacers are formed on opposing longitudinal sidewalls of each mandrel in the first array of mandrels. A second array of mandrels is formed on the hardmask layer. Each mandrel in the second array of mandrels is laterally separated from each mandrel in the first array of mandrels by the first sidewall image transfer spacers. Second sidewall image transfer spacers are formed on opposing transversal sidewalls of the first array of mandrels and the second array of mandrels. Portions of the second sidewall image transfer spacers are selectively removed to define a crosslink fin pattern to be transferred to the semiconductor substrate.