The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 01, 2024

Filed:

Sep. 30, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Ruilong Xie, Niskayuna, NY (US);

Indira Seshadri, Niskayuna, NY (US);

Eric Miller, Watervliet, NY (US);

Kangguo Cheng, Schenectady, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 21/8234 (2006.01); H01L 23/528 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41775 (2013.01); H01L 21/823475 (2013.01); H01L 23/5286 (2013.01); H01L 27/088 (2013.01); H01L 27/0922 (2013.01); H01L 29/401 (2013.01); H01L 29/41725 (2013.01); H01L 29/42392 (2013.01); H01L 29/78696 (2013.01);
Abstract

Embodiments disclosed herein include a semiconductor structure for reducing contact to contact shorting. The semiconductor structure may include a gate cut region with a liner and a dielectric core confined within a first lateral side of the liner and a second lateral side of the liner. The semiconductor structure may also include a first source/drain (S/D) contact overlapping the first lateral side and the dielectric core. The first S/D may include a line-end that contacts the second lateral side of the liner.


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