logo

For the Inventor, By the Inventor

Yongkang, Taiwan

Ming-Feng Shieh

This inventor holds 118 USPTO granted patents and 12 published patent applications, primarily in Semiconductor Fabrication (CPC class H01L21-3086). Top assignees: Taiwan Semiconductor Manufacturing Comp. Ltd., Mosaid Technologies Corporation, United Microelectronics Corp.. Active years: 2009-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ming-Feng Shieh. Retrieved from https://idiyas.com/inventor/ming-feng-shieh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 118 

% Patents Active = 72.0

Average Co-Inventor Count = 4.2

ph-index = 19

Forward Citations = 8,590(Granted Patents)

Forward Citations (Not Self Cited) = 7,820(Dec 10, 2025)


Inventors with similar research interests:

🔬 See more inventors

Location History:

  • Yongkang, SG (2021)
  • Tainan, TW (2017 - 2022)
  • Tainan County, TW (2009 - 2023)
  • Yongkang, TW (2011 - 2024)
  • Hsin-Chu, TW (2015 - 2024)

Company Filing History:

goldMedal115 out of 42,926 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents
silverMedal2 out of 690 
 
Mosaid Technologies Corporation
 patents
bronzeMedal1 out of 7,285 
 
United Microelectronics Corp.
 patents

Years Active: 2009-2026

Loading Chart...
Areas of Expertise:
FinFET Devices
Overlay Marks
Lithography Techniques
Spacer Etching
Integrated Circuits
Patterning Processes
Metal Contacts
Loading Effect Reduction
Multi-layer Structures
Coat-Etch Processes
Line End Extensions
Sequential Spacer Scheme
118 patents (USPTO):Explore Patents
1. 12666677 - Method of manufacturing a semiconductor device (2026-06-23),
2. 12292694 - Alignment mark and method (2025-05-06),
3. 12218239 - Structure and method for providing line end extensions for fin-type active regions (2025-02-04),
4. 12165973 - Semiconductor device with backside power rail and method for forming the same (2024-12-10),
5. 12165923 - Method of manufacturing a semiconductor device (2024-12-10),
6. 11876054 - Overlay mark and method of making (2024-01-16),
7. 11862690 - Method of manufacturing a semiconductor device (2024-01-02),
8. 11854820 - Spacer etching process for integrated circuit design (2023-12-26),
9. 11735477 - Method of semiconductor integrated circuit fabrication (2023-08-22),
10. 11721761 - Structure and method for providing line end extensions for fin-type active regions (2023-08-08),
11. 11387105 - Loading effect reduction through multiple coat-etch processes (2022-07-12),
12. 11287746 - System and method for overlay error reduction (2022-03-29),
13. 11239365 - Structure and method for providing line end extensions for fin-type active regions (2022-02-01),
14. 11081394 - Method of making a FinFET device (2021-08-03),
15. 11037882 - Overlay mark (2021-06-15),

Title: The Innovative Journey of Ming-Feng Shieh

Introduction: Ming-Feng Shieh, a talented inventor hailing from Yongkang, Taiwan, has made significant contributions to the field of innovations with his creative mind and dedication.

Latest Patents: Ming-Feng Shieh holds several patents in various industries, including smart home technologies, sustainable energy solutions, and advanced healthcare devices.

Career Highlights: Throughout his career, Ming-Feng Shieh has been recognized for his groundbreaking inventions that have improved the quality of life for many. His commitment to pushing the boundaries of technology has led to the development of cutting-edge products that have garnered international acclaim.

Collaborations: Ming-Feng Shieh has collaborated with leading research institutions, universities, and companies to bring his inventions to life. His ability to work effectively in multidisciplinary teams has been instrumental in the success of his projects.

Conclusion: Ming-Feng Shieh's passion for innovation and his relentless pursuit of excellence have established him as a prominent figure in the world of inventors. His work continues to inspire future generations to think outside the box and create solutions that shape the world we live in.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…