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Mosaid Technologies Corporation

USPTO Granted Patents = 690

% Expired Patents = 38.6

CIPO Patents = 11

EPO Patents = 63

Trademarks = 3

Forward Citations = 8,668

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172 inventors (with patents filed for the assignee):

Jin-Ki Kim (109 out of 176 patents)

Hong Beom Pyeon (94 out of 128 patents)

Peter B Gillingham (92 out of 138 patents)

4. HakJune Oh (67 out of 96 patents)

5. Yehuda Binder (65 out of 304 patents)

6. Richard C Foss (42 out of 50 patents)

7. Valerie L Lines (36 out of 42 patents)

8. Bruce Millar (30 out of 38 patents)

9. David Alan Brown (28 out of 69 patents)

10. Graham A Allan (28 out of 39 patents)

11. Paul W Demone (25 out of 37 patents)

12. Dieter Haerle (24 out of 30 patents)

13. Peter Vlasenko (22 out of 29 patents)

14. Robert McKenzie (19 out of 21 patents)

15. Alan S Roth (17 out of 106 patents)

Core Competencies:

NAND Flash Memory

Memory Cell Structures

Static Leakage

Integrated Circuit

Three-Dimensional Memory

Concurrent Bank Operations

Hybrid Solid-State Memory

Flexible Memory Operations

Clock Mode Determination

Voltage Down Converter

Multi-Level Cell Access

Delay Locked Loop

690 patents: Sort by Forward Citations

1. 12321600 - Clock mode determination in a memory system (2025-06-03),

2. 12218239 - Structure and method for providing line end extensions for fin-type active regions (2025-02-04),

3. 12119411 - NAND flash memory with vertical cell stack structure and method for manufacturing same (2024-10-15),

4. RE50124 - Three-dimensional nonvolatile memory cell structure (2024-09-10),

5. 11948629 - Non-volatile memory device with concurrent bank operations (2024-04-02),

6. RE49854 - Systems and methods for minimizing static leakage of an integrated circuit (2024-02-27),

7. 11880569 - Clock mode determination in a memory system (2024-01-23),

8. 11721761 - Structure and method for providing line end extensions for fin-type active regions (2023-08-08),

9. 11669248 - Clock mode determination in a memory system (2023-06-06),

10. 11664463 - NAND flash memory with vertical cell stack structure and method for manufacturing same (2023-05-30),

11. 11600323 - Non-volatile memory device with concurrent bank operations (2023-03-07),

12. 11594281 - Method for erasing memory cells in a flash memory device using a positive well bias voltage and a negative word line voltage (2023-02-28),

13. 11362645 - Power managers for an integrated circuit (2022-06-14),

14. 11347396 - Clock mode determination in a memory system (2022-05-31),

15. RE49018 - Charge pump for PLL/DLL (2022-04-04),

Company Overview

Mosaid Technologies Corporation, based in Ottawa, Canada, specializes in the development and innovation of non-volatile memory technologies. The company focuses on advanced solutions in NAND flash memory, emphasizing memory cell structures and integrated circuit designs. Mosaid's research extends to critical areas such as static leakage management, three-dimensional memory architectures, and hybrid solid-state memory systems. Their expertise in flexible memory operations and concurrent bank operations positions them as a key player in the evolving landscape of memory technology.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 20 2026

690 Patents

#2 in Ottawa

#12 in Canada

#1,451 in the World

Mosaid Technologies Corporation

Forward Citations = 8,668

172 inventors:

Jin-Ki Kim (109 out of 176 patents)

Hong Beom Pyeon (94 out of 128 patents)

Peter B Gillingham (92 out of 138 patents)

4. HakJune Oh (67 out of 96 patents)

5. Yehuda Binder (65 out of 304 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Mosaid Technologies Corporation. Retrieved from https://idiyas.com/company/mosaid-technologies

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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