The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 28, 2023

Filed:

Jan. 21, 2021
Applicant:

Mosaid Technologies Incorporated, Ottawa, CA;

Inventors:

Chung-Zen Chen, Hsinchu, TW;

Yang-Chieh Lin, Tainan, TW;

Chung-Shan Kuo, Shulin, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/14 (2006.01); G11C 16/16 (2006.01); G11C 16/08 (2006.01); G11C 16/02 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G11C 16/14 (2013.01); G11C 16/02 (2013.01); G11C 16/0408 (2013.01); G11C 16/08 (2013.01); G11C 16/16 (2013.01);
Abstract

A memory device of the non-volatile type including a memory array having a plurality of memory cells organized as sectors, each sector having a main word line associated with a plurality of local word lines, each local word line coupled to the main word line by a respective local word line driver circuit, each of the local word line driver circuits consisting of a first MOS transistor coupled between the respective main word line and a respective local word line and a second MOS transistor coupled between the respective local word line and a first biasing terminal.


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