Yang-Chieh Lin

Title: Innovations of Yang-Chieh Lin

Introduction

Yang-Chieh Lin is a prominent inventor based in Tainan, Taiwan. He has made significant contributions to the field of memory devices, holding a total of nine patents. His work focuses on enhancing the efficiency and functionality of flash memory technology.

Latest Patents

One of Yang-Chieh Lin's latest patents is a method for erasing memory cells in a flash memory device using a positive well bias voltage and a negative word line voltage. This innovation involves a non-volatile memory device that includes a memory array organized into sectors. Each sector has a main word line associated with multiple local word lines, which are coupled through respective local word line driver circuits. These circuits consist of a first MOS transistor connected between the main word line and the local word line, and a second MOS transistor linked between the local word line and a first biasing terminal.

Career Highlights

Throughout his career, Yang-Chieh Lin has worked with notable companies such as Elite Semiconductor Memory Technology, Inc. and Mosaid Technologies Corporation. His experience in these organizations has allowed him to develop and refine his innovative ideas in memory technology.

Collaborations

Yang-Chieh Lin has collaborated with several professionals in his field, including Chung-Zen Chen and Chung-Shan Kuo. These partnerships have contributed to the advancement of his research and inventions.

Conclusion

Yang-Chieh Lin's contributions to the field of memory devices through his patents and collaborations highlight his role as a key innovator in technology. His work continues to influence advancements in non-volatile memory systems.