The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 03, 2008
Filed:
Feb. 07, 2007
Applicant:
Yang-chieh Lin, Tainan, TW;
Inventor:
Yang-Chieh Lin, Tainan, TW;
Assignee:
Elite Semiconductor Memory Technology Inc., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A program method for a flash memory semiconductor device includes the steps of providing a bit line voltage for programming a group of memory cells and detecting if the bit line voltage meets a selected target voltage. When the bit line voltage meets the selected target voltage, a program operation is performed on the group of memory cells. When the bit line voltage does not meet the selected target voltage, the programming operation is individually performed on at least a first subgroup of memory cells from the group and a second subgroup of memory cells from the group.