Chung-Shan Kuo

Title: Innovations of Chung-Shan Kuo

Introduction

Chung-Shan Kuo is a notable inventor based in Shulin, Taiwan. He has made significant contributions to the field of memory technology, holding a total of 12 patents. His work primarily focuses on advancements in flash memory devices, showcasing his expertise and innovative spirit.

Latest Patents

One of Chung-Shan Kuo's latest patents is a method for erasing memory cells in a flash memory device using a positive well bias voltage and a negative word line voltage. This invention describes a memory device of the non-volatile type, which includes a memory array organized into sectors. Each sector has a main word line associated with multiple local word lines, with each local word line coupled to the main word line through a respective local word line driver circuit. The local word line driver circuits consist of a first MOS transistor connected between the main word line and the local word line, and a second MOS transistor linked between the local word line and a first biasing terminal.

Career Highlights

Chung-Shan Kuo has worked with several prominent companies in the semiconductor industry. He has been associated with Elite Semiconductor Memory Technology, Inc. and Mosaid Technologies Corporation. His experience in these organizations has contributed to his development as an inventor and innovator in memory technology.

Collaborations

Chung-Shan Kuo has collaborated with notable colleagues, including Chung-Zen Chen and Yang-Chieh Lin. Their teamwork has likely fostered an environment of innovation and creativity in their respective projects.

Conclusion

Chung-Shan Kuo's contributions to the field of memory technology through his patents and collaborations highlight his role as a significant inventor. His work continues to influence advancements in non-volatile memory devices, showcasing the importance of innovation in technology.