The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2023
Filed:
Jul. 07, 2021
Applicant:
Mosaid Technologies Incorporated, Ottawa, CA;
Inventor:
Hyoung Seub Rhie, Ottawa, CA;
Assignee:
Mosaid Technologies Incorporated, Ottawa, CA;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/792 (2006.01); H01L 29/66 (2006.01); G11C 16/04 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7926 (2013.01); G11C 11/5621 (2013.01); G11C 16/0483 (2013.01); H01L 29/66833 (2013.01); H10B 43/27 (2023.02); H10B 43/40 (2023.02); G11C 2213/71 (2013.01);
Abstract
Disclosed is a method of manufacturing flash memory with a vertical cell stack structure. The method includes forming source lines in a cell area of a substrate having an ion-implanted well and forming an alignment mark relative to the source lines. The alignment mark is formed in the substrate outside the cell area of the substrate. After formation of the source lines, cell stacking layers are formed. After forming the cell stacking layers, cell pillars in the cell stacking layers are formed at locations relative to the previously formed source lines using the alignment mark to correctly locate the cell pillars.