The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 31, 2026

Filed:

Jun. 15, 2022
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Su Chen Fan, Cohoes, NY (US);

Stuart Sieg, Albany, NY (US);

Dominik Metzler, Clifton Park, NY (US);

Indira Seshadri, Niskayuna, NY (US);

Junli Wang, Slingerlands, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/033 (2006.01); H01L 21/311 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01); H10P 50/00 (2026.01); H10P 76/40 (2026.01); H10W 20/00 (2026.01); H10W 20/41 (2026.01); H10W 20/42 (2026.01);
U.S. Cl.
CPC ...
H10W 20/069 (2026.01); H10P 50/73 (2026.01); H10P 76/4085 (2026.01); H10W 20/056 (2026.01); H10W 20/084 (2026.01); H10W 20/089 (2026.01); H10W 20/42 (2026.01); H10W 20/435 (2026.01);
Abstract

A semiconductor device is provided. The semiconductor device includes an interlayer dielectric layer; and a plurality of metal contacts formed in the interlayer dielectric layer. The plurality of metal contacts include a plurality of shallow metal contacts having a first depth, and a plurality of deep metal contacts having a second depth that is greater than the first depth, wherein a first one of the shallow metal contacts overlaps and directly contacts a first one of the deep metal contacts, and wherein the plurality of metal contacts have an equal spacing therebetween.


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