The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 20, 2025

Filed:

Nov. 30, 2021
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Jing Guo, Niskayuna, NY (US);

Ekmini Anuja De Silva, Slingerlands, NY (US);

Nicolas Loubet, Guilderland, NY (US);

Indira Seshadri, Niskayuna, NY (US);

Ruqiang Bao, Niskayuna, NY (US);

Nelson Felix, Slingerlands, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10D 84/834 (2025.01); H10D 30/024 (2025.01); H10D 30/62 (2025.01); H10D 84/0158 (2025.01); H10D 84/038 (2025.01); H01L 21/0262 (2013.01);
Abstract

Embodiments of the invention include a dielectric reflow technique for boundary control in which a first layer is deposited on a first transistor region and a second transistor region, the first and second transistor regions being adjacent. A dielectric layer is formed to protect the second transistor region such that the first transistor region is exposed, the dielectric layer bounded at a first location. In response to removing a portion of the first layer on the first transistor region, the dielectric layer protecting the second transistor region is reflowed such that at least a reflowed portion of the dielectric layer extends beyond the first location.


Find Patent Forward Citations

Loading…