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For the Inventor, By the Inventor

Hsinchu, Taiwan

Hsun-Chung Kuang

This inventor holds 93 USPTO granted patents and 36 published patent applications, primarily in Ferroelectric Memory Devices (CPC class H10B53-30). Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2011-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hsun-Chung Kuang. Retrieved from https://idiyas.com/inventor/hsun-chung-kuang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 93 

% Patents Active = 95.7

Average Co-Inventor Count = 3.9

ph-index = 6

Forward Citations = 370(Granted Patents)

Forward Citations (Not Self Cited) = 320(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Yang-Mei, TW (2011 - 2012)
  • Hsin-Chu, TW (2014 - 2024)

Company Filing History:

goldMedal93 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2011-2026

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Areas of Expertise:
Ferroelectric Memory
Semiconductor Fabrication
Circuit Design
Memory Density
Doped Structures
Bond Pad Improvement
Isolation Structures
Resistive Memory Cells
Dielectric Adhesion
CMP Techniques
Multi-layer Electrodes
Voltage Modulation
93 patents (USPTO):Explore Patents
1. 12588271 - Multi-layer electrode to improve performance of ferroelectric memory device (2026-03-24),
2. 12568777 - Top electrode via with low contact resistance (2026-03-03),
3. 12471431 - Hard mask layer below via structure in display device (2025-11-11),
4. 12456649 - Semiconductor device and methods of manufacturing thereof (2025-10-28),
5. 12424256 - Circuit design and layout with high embedded memory density (2025-09-23),
6. 12408448 - Deep trench isolation structure and methods for fabrication thereof (2025-09-02),
7. 12364171 - Resistive memory cell with switching layer comprising one or more dopants (2025-07-15),
8. 12356631 - FeRAM with laminated ferroelectric film and method forming same (2025-07-08),
9. 12349366 - Interface film to mitigate size effect of memory device (2025-07-01),
10. 12341019 - Anti-oxidation layer to prevent dielectric loss from planarization process (2025-06-24),
11. 12334317 - Remote plasma ultraviolet enhanced deposition (2025-06-17),
12. 12310036 - Threshold voltage-modulated memory device using variable-capacitance and methods of forming the same (2025-05-20),
13. 12302663 - Bond pad structure for bonding improvement (2025-05-13),
14. 12295267 - Semiconductor device and method of manufacturing the same (2025-05-06),
15. 12290003 - Conductive structure connection with interconnect structure (2025-04-29),

Title: The Innovative Journey of Inventor Hsun-Chung Kuang

Introduction: Hsun-Chung Kuang is a pioneering inventor hailing from Hsinchu, Taiwan. His dedication to innovation and problem-solving has led to remarkable advancements in various fields.

Latest Patents: Hsun-Chung Kuang's recent patents showcase his expertise in developing cutting-edge technologies that have the potential to revolutionize industries worldwide.

Career Highlights: Throughout his illustrious career, Hsun-Chung Kuang has consistently demonstrated a knack for creating innovative solutions to complex challenges. His contributions have not only earned him recognition but have also significantly impacted the technological landscape.

Collaborations: Hsun-Chung Kuang has collaborated with leading experts and organizations in the industry, fostering a culture of innovation and knowledge-sharing. These collaborations have been instrumental in bringing his groundbreaking ideas to life.

Conclusion: In conclusion, Hsun-Chung Kuang's relentless pursuit of innovation and his remarkable problem-solving skills have established him as a trailblazer in the world of inventions. His work continues to inspire future generations of inventors and researchers to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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