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Hsinchu, Taiwan

Hsun-Chung Kuang

USPTO Granted Patents = 91 (Patent Applications = 34)

Average Co-Inventor Count = 3.9

ph-index = 6

Forward Citations = 340(Granted Patents)

Forward Citations (Not Self Cited) = 320(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Yang-Mei, TW (2011 - 2012)
Hsin-Chu, TW (2014 - 2024)

Company Filing History:

91 out of 40,850

Taiwan Semiconductor Manufacturing Comp. Ltd.

Years Active: 2011-2025

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Areas of Expertise:

Ferroelectric Memory

Semiconductor Device

Memory Device

Circuit Design

Deep Trench Isolation

Resistive Memory Cell

Chemical Mechanical Polishing

Integrated Aligned Stealth Laser

Anti-Oxidation Layer

Multi-Doped Data Storage

Threshold Voltage-Modulated Memory

Interface Film

91 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12471431 - Hard mask layer below via structure in display device (2025-11-11),

2. 12456649 - Semiconductor device and methods of manufacturing thereof (2025-10-28),

3. 12424256 - Circuit design and layout with high embedded memory density (2025-09-23),

4. 12408448 - Deep trench isolation structure and methods for fabrication thereof (2025-09-02),

5. 12364171 - Resistive memory cell with switching layer comprising one or more dopants (2025-07-15),

6. 12356631 - FeRAM with laminated ferroelectric film and method forming same (2025-07-08),

7. 12349366 - Interface film to mitigate size effect of memory device (2025-07-01),

8. 12341019 - Anti-oxidation layer to prevent dielectric loss from planarization process (2025-06-24),

9. 12334317 - Remote plasma ultraviolet enhanced deposition (2025-06-17),

10. 12310036 - Threshold voltage-modulated memory device using variable-capacitance and methods of forming the same (2025-05-20),

11. 12302663 - Bond pad structure for bonding improvement (2025-05-13),

12. 12295267 - Semiconductor device and method of manufacturing the same (2025-05-06),

13. 12290003 - Conductive structure connection with interconnect structure (2025-04-29),

14. 12266604 - Techniques to inhibit delamination from flowable gap-fill dielectric (2025-04-01),

15. 12255062 - Integrate rinse module in hybrid bonding platform (2025-03-18),

Title: The Innovative Journey of Inventor Hsun-Chung Kuang

Introduction: Hsun-Chung Kuang is a pioneering inventor hailing from Hsinchu, Taiwan. His dedication to innovation and problem-solving has led to remarkable advancements in various fields.

Latest Patents: Hsun-Chung Kuang's recent patents showcase his expertise in developing cutting-edge technologies that have the potential to revolutionize industries worldwide.

Career Highlights: Throughout his illustrious career, Hsun-Chung Kuang has consistently demonstrated a knack for creating innovative solutions to complex challenges. His contributions have not only earned him recognition but have also significantly impacted the technological landscape.

Collaborations: Hsun-Chung Kuang has collaborated with leading experts and organizations in the industry, fostering a culture of innovation and knowledge-sharing. These collaborations have been instrumental in bringing his groundbreaking ideas to life.

Conclusion: In conclusion, Hsun-Chung Kuang's relentless pursuit of innovation and his remarkable problem-solving skills have established him as a trailblazer in the world of inventions. His work continues to inspire future generations of inventors and researchers to push the boundaries of what is possible.

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