The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2025
Filed:
Jun. 28, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Tsai-Ming Huang, Zhubei, TW;
Wei-Chieh Huang, Zhudong Township, TW;
Hsun-Chung Kuang, Hsinchu, TW;
Yen-Chang Chu, Tainan, TW;
Cheng-Che Chung, Hualien County, TW;
Chin-Wei Liang, Zhubei, TW;
Ching-Sen Kuo, Taipei, TW;
Jieh-Jang Chen, Zhubei, TW;
Feng-Jia Shiu, Jhudong Township, TW;
Sheng-Chau Chen, Tainan, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
In a method of manufacturing a semiconductor device, a first interlayer dielectric (ILD) layer is formed over a substrate, a chemical mechanical polishing (CMP) stop layer is formed over the first ILD layer, a trench is formed by patterning the CMP stop layer and the first ILD layer, a metal layer is formed over the CMP stop layer and in the trench, a sacrificial layer is formed over the metal layer, a CMP operation is performed on the sacrificial layer and the metal layer to remove a portion of the metal layer over the CMP stop layer, and a remaining portion of the sacrificial layer over the trench is removed.