The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 03, 2026
Filed:
Jul. 20, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Bi-Shen Lee, Hsin-Chu, TW;
Hai-Dang Trinh, Hsinchu, TW;
Hsun-Chung Kuang, Hsinchu, TW;
Tzu-Chung Tsai, Hsinchu County, TW;
Yao-Wen Chang, Taipei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
The present disclosure, in some embodiments, relates to a method of forming a memory device. The method includes forming a data storage layer on a bottom electrode layer over a substrate, forming a first top electrode layer over the data storage layer, and forming a second top electrode layer over the first top electrode layer. The first top electrode layer has a smaller corrosion potential than the second top electrode layer. A first patterning process is performed on the first top electrode layer and the second top electrode layer to define a multi-layer top electrode. A second patterning process is performed on the data storage layer and the bottom electrode layer to define a data storage structure and a bottom electrode.