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Hsinchu, Taiwan

Hai-Dang Trinh

This inventor holds 94 USPTO granted patents and 36 published patent applications, primarily in Ferroelectric Memory Devices (CPC class H01L45-1233). Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2017-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hai-Dang Trinh. Retrieved from https://idiyas.com/inventor/hai-dang-trinh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 94 

% Patents Active = 94.7

Average Co-Inventor Count = 3.7

ph-index = 7

Forward Citations = 153(Granted Patents)

Forward Citations (Not Self Cited) = 98(Dec 10, 2025)


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Company Filing History:

goldMedal94 out of 42,872 
 
Taiwan Semiconductor Manufacturing Comp. Ltd.
 patents

Years Active: 2017-2026

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Areas of Expertise:
Phase Change Material
Ferroelectric Memory
Resistive Memory Cell
RRAM Structure
Physical Vapor Deposition
Data Storage Structure
Threshold Voltage Modulation
Doped Sidewall Spacer
Memory Device Structure
Semiconductor Fabrication
Multi-layer Electrode
Circuit Design
94 patents (USPTO):Explore Patents
1. 12598756 - Phase change material (PCM) switch having low heater resistance (2026-04-07),
2. 12588271 - Multi-layer electrode to improve performance of ferroelectric memory device (2026-03-24),
3. 12568777 - Top electrode via with low contact resistance (2026-03-03),
4. 12486566 - Physical vapor deposition chamber with target surface morphology monitor (2025-12-02),
5. 12432942 - MIM capacitor and method of forming the same (2025-09-30),
6. 12424256 - Circuit design and layout with high embedded memory density (2025-09-23),
7. 12414484 - RRAM structure (2025-09-09),
8. 12408567 - Memory device structure with data storage element (2025-09-02),
9. 12408448 - Deep trench isolation structure and methods for fabrication thereof (2025-09-02),
10. 12364171 - Resistive memory cell with switching layer comprising one or more dopants (2025-07-15),
11. 12356631 - FeRAM with laminated ferroelectric film and method forming same (2025-07-08),
12. 12349366 - Interface film to mitigate size effect of memory device (2025-07-01),
13. 12334317 - Remote plasma ultraviolet enhanced deposition (2025-06-17),
14. 12310036 - Threshold voltage-modulated memory device using variable-capacitance and methods of forming the same (2025-05-20),
15. 12295270 - RRAM device with improved performance (2025-05-06),

Title: The Innovative Mind of Hai-Dang Trinh: A Leader in Resistive Memory Technology

Introduction: Hai-Dang Trinh, based in Hsinchu, Taiwan, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 75 patents, he is at the forefront of innovations that enhance data storage solutions. His work primarily revolves around improving memory cell performance through advanced materials and design methodologies.

Latest Patents: Trinh's latest inventions include a multi-doped data storage structure designed to improve resistive memory cell performance. This method involves forming an integrated chip with a bottom electrode and a data storage structure that utilizes a first and second dopant at differing atomic percents. Additionally, he has developed a threshold voltage-modulated memory device utilizing a variable-capacitance system. This innovative device comprises a field effect transistor and a variable-capacitance capacitor, allowing for reversible electrical field-dependent resistivity modulation and enabling efficient data storage.

Career Highlights: Currently, Hai-Dang Trinh is associated with Taiwan Semiconductor Manufacturing Company Limited, a leader in the semiconductor manufacturing industry. His work has continually pushed the boundaries of memory technology, paving the way for smarter and more efficient data handling in electronic devices.

Collaborations: Throughout his career, Trinh has collaborated with talented colleagues, including Hsing-Lien Lin and Cheng-Yuan Tsai. These partnerships have enhanced his research and led to groundbreaking advancements in memory technology and semiconductor applications.

Conclusion: Hai-Dang Trinh stands as a pivotal figure in the realm of semiconductor innovations, with a remarkable array of patents underscoring his expertise. His latest advancements in resistive memory technology not only showcase his innovative spirit but also contribute to the evolution of data storage solutions in modern electronics. As he continues to collaborate and develop new technologies, Trinh's impact on the industry is bound to grow.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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