The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 06, 2025
Filed:
Oct. 27, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Fa-Shen Jiang, Taoyuan, TW;
Cheng-Yuan Tsai, Chu-Pei, TW;
Hai-Dang Trinh, Hsinchu, TW;
Hsing-Lien Lin, Hsin-Chu, TW;
Bi-Shen Lee, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
The present disclosure relates to a resistive random access memory (RRAM) device. In some embodiments, the RRAM device includes a first electrode disposed over a substrate and a second electrode over the first electrode. A doped data storage structure is disposed between the first electrode and the second electrode. The doped data storage structure has a dopant with a doping concentration profile that is asymmetric over a height of the doped data storage structure and that has a maximum dopant concentration at non-zero distances from a top surface and a bottom surface of the doped data storage structure.