The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 30, 2025
Filed:
Jun. 27, 2022
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Hsing-Lien Lin, Hsinchu, TW;
Hai-Dang Trinh, Hsinchu, TW;
Yao-Wen Chang, Taipei, TW;
Jui-Lin Chu, Hsinchu, TW;
Cheng-Te Lee, Hsinchu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
A metal-insulator-metal (MIM) capacitor and methods of forming the same are described. In some embodiments, the method includes forming an opening having a first depth in one or more dielectric layers, depositing a layer in the opening and on the one or more dielectric layers, performing an anisotropic etch process to remove portions of the layer formed on horizontal surfaces, extending the opening to a second depth in the one or more dielectric layers, removing the layer, extending the opening to a third depth in the one or more dielectric layers, and forming a MIM capacitor in the opening.