The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 01, 2025
Filed:
Jul. 26, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Bi-Shen Lee, Hsinchu, TW;
Yi Yang Wei, Hsinchu, TW;
Hai-Dang Trinh, Hsinchu, TW;
Hsun-Chung Kuang, Hsinchu, TW;
Cheng-Yuan Tsai, Chu-Pei, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
In some embodiments, the present disclosure relates to an integrated chip. The integrated chip includes a lower electrode structure disposed over one or more interconnects. The one or more interconnects are arranged within a lower inter-level dielectric (ILD) structure over a substrate. A barrier is arranged along a lower surface of the lower electrode structure. The barrier separates the lower electrode structure from the one or more interconnects. An amorphous initiation layer is over the lower electrode layer and a ferroelectric material is on the amorphous initiation layer. The ferroelectric material has a substantially uniform orthorhombic crystalline phase. An upper electrode is over the ferroelectric material.