The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2025

Filed:

Jan. 03, 2024
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Fa-Shen Jiang, Taoyuan, TW;

Cheng-Yuan Tsai, Chu-Pei, TW;

Hai-Dang Trinh, Hsinchu, TW;

Hsing-Lien Lin, Hsin-Chu, TW;

Hsun-Chung Kuang, Hsinchu, TW;

Bi-Shen Lee, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 70/00 (2023.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10N 70/828 (2023.02); H10B 63/30 (2023.02); H10N 70/043 (2023.02); H10N 70/063 (2023.02); H10N 70/24 (2023.02); H10N 70/8833 (2023.02);
Abstract

Various embodiments of the present disclosure are directed towards an integrated chip including a first conductive structure over a substrate. A data storage structure overlies the first conductive structure. The data storage structure comprises a first dielectric layer on the first conductive structure and a second dielectric layer on the first dielectric layer. The first dielectric layer comprises a dielectric material and a first dopant having a concentration that changes from a top surface of the first dielectric layer in a direction towards the first conductive structure. A second conductive structure overlies the data storage structure.


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