The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 06, 2025

Filed:

Apr. 29, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;

Inventors:

Bi-Shen Lee, Hsinchu, TW;

Hai-Dang Trinh, Hsinchu, TW;

Hsun-Chung Kuang, Hsinchu, TW;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10N 50/80 (2022.12); H10B 61/00 (2022.12); H10N 50/01 (2022.12);
U.S. Cl.
CPC ...
H10N 50/80 (2023.01); H10B 61/22 (2023.01); H10N 50/01 (2023.01);
Abstract

A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate, a first dielectric layer, an etching stop layer, a second dielectric layer, a conductive via, and a data storage structure. The first dielectric layer is disposed on the substrate. The etching stop layer is disposed on the first dielectric layer. The second dielectric layer is disposed on the etching stop layer. The first dielectric layer, the etching stop layer, and the second dielectric layer collectively define an opening. The conductive via is disposed in the opening. The data storage structure is disposed on the conductive via.


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