The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 29, 2025

Filed:

Dec. 12, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Sheng-Chau Chen, Tainan, TW;

Cheng-Tai Hsiao, Tainan, TW;

Cheng-Yuan Tsai, Chu-Pei, TW;

Hsun-Chung Kuang, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10N 50/80 (2022.12); H10B 61/00 (2022.12); H10N 50/01 (2022.12);
U.S. Cl.
CPC ...
H10N 50/80 (2023.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01);
Abstract

Some embodiments relate to a semiconductor structure. The semiconductor structure includes a conductive structure over a semiconductor substrate. A first dielectric layer is over the conductive structure. A second dielectric layer is over the first dielectric layer. An interconnect structure is over the conductive structure and disposed in the first and second dielectric layers. The interconnect structure has a protrusion in direct contact with a sidewall of the conductive structure. The interconnect structure comprises an interconnect liner surrounding a conductive interconnect body. A sidewall spacer is disposed on the sidewall of the conductive structure.


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