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Hopewell Junction, NY, United States of America

Gregory Gower Freeman

USPTO Granted Patents = 52

EPO Patents = 1

Average Co-Inventor Count = 3.7

ph-index = 11

Forward Citations = 375(Granted Patents)

Forward Citations (Not Self Cited) = 368(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Hopewell Jct., NY (US) (2012)
Hopewell Junction, NY (US) (2002 - 2016)
Wappinger Falls, NY (US) (2016)
Wappingers Falls, NY (US) (2017 - 2019)

Company Filing History:

45 out of 164,197

International Business Machines Corporation

Globalfoundries Inc.

Years Active: 2002-2019

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Areas of Expertise:

On-Chip Sensors

Epitaxial Semiconductor Material

Thermal Runaway Reduction

Electromigration

Diffusion Barriers

Stress-Generating Structures

Field-Effect Transistors

Bipolar Transistors

SiGe Heterojunctions

Self-Aligned Devices

MOSFET Technology

BiCMOS Integration

52 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10191108 - On-chip sensor for monitoring active circuits on integrated circuit (IC) chips (2019-01-29),

2. 9953873 - Methods of modulating the morphology of epitaxial semiconductor material (2018-04-24),

3. 9906213 - Reducing thermal runaway in inverter devices (2018-02-27),

4. 9552455 - Method for an efficient modeling of the impact of device-level self-heating on electromigration limited current specifications (2017-01-24),

5. 9406569 - Semiconductor device having diffusion barrier to reduce back channel leakage (2016-08-02),

6. 9305999 - Stress-generating structure for semiconductor-on-insulator devices (2016-04-05),

7. 9287399 - Faceted intrinsic epitaxial buffer layer for reducing short channel effects while maximizing channel stress levels (2016-03-15),

8. 9240354 - Semiconductor device having diffusion barrier to reduce back channel leakage (2016-01-19),

9. 8940595 - Faceted intrinsic epitaxial buffer layer for reducing short channel effects while maximizing channel stress levels (2015-01-27),

10. 8629501 - Stress-generating structure for semiconductor-on-insulator devices (2014-01-14),

11. 8232603 - Gated diode structure and method including relaxed liner (2012-07-31),

12. 8115254 - Semiconductor-on-insulator structures including a trench containing an insulator stressor plug and method of fabricating same (2012-02-14),

13. 8017483 - Method of creating asymmetric field-effect-transistors (2011-09-13),

14. 7863143 - High performance schottky-barrier-source asymmetric MOSFETs (2011-01-04),

15. 7790553 - Methods for forming high performance gates and structures thereof (2010-09-07),

Title: Gregory Gower Freeman: Pioneering Inventor from Hopewell Junction

Introduction: Gregory Gower Freeman is a distinguished inventor hailing from the vibrant town of Hopewell Junction, NY. His innovative spirit and dedication to technological advancements have made him a prominent figure in the world of patents and inventions.

Latest Patents: Gregory Gower Freeman holds several groundbreaking patents in various fields, showcasing his versatility and creativity as an inventor. His recent patents focus on cutting-edge technologies that aim to revolutionize the way we interact with everyday devices.

Career Highlights: Throughout his illustrious career, Gregory Gower Freeman has consistently pushed the boundaries of innovation. His contributions have not only earned him recognition within the industry but have also significantly impacted the lives of many through his inventive solutions.

Collaborations: Gregory Gower Freeman has collaborated with leading experts and organizations in the field of technology and research. These collaborations have been instrumental in bringing his visionary ideas to life and turning them into tangible inventions that have the potential to shape the future.

Conclusion: Gregory Gower Freeman's passion for innovation and his relentless pursuit of excellence have solidified his position as a trailblazing inventor. His remarkable journey continues to inspire aspiring inventors and showcases the transformative power of creativity and perseverance in the world of patents and inventions.

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