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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9240354 B1

PDFFull Text
Date of Patent:
Jan. 19, 2016

Filed:

Nov. 14, 2012

Semiconductor device having diffusion barrier to reduce back channel leakage

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Gregory G. Freeman, Hopewell Junction, NY (US);

Kam Leung Lee, Putnam Valley, NY (US);

Chengwen Pei, Danbury, CT (US);

Geng Wang, Stormville, NY (US);

Yanli Zhang, San Jose, CA (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorney:

Cantor Colburn LLP

Primary Examiner:

Marvin Payen

Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 21/84 (2006.01); H01L 29/78 (2006.01); H01L 21/265 (2006.01); H01L 29/66 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 29/06 (2006.01); H01L 21/324 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 21/84 (2013.01); H01L 21/26506 (2013.01); H01L 21/3247 (2013.01); H01L 21/76243 (2013.01); H01L 27/1087 (2013.01); H01L 27/10873 (2013.01); H01L 27/1203 (2013.01); H01L 29/0623 (2013.01); H01L 29/66181 (2013.01); H01L 29/78 (2013.01); H01L 29/78603 (2013.01); H01L 29/78612 (2013.01); H01L 29/78687 (2013.01); H01L 29/78696 (2013.01); H01L 21/26586 (2013.01);
Abstract

A semiconductor-on-insulator (SOI) substrate comprises a bulk semiconductor substrate, a buried insulator layer formed on the bulk substrate and an active semiconductor layer formed on the buried insulator layer. Impurities are implanted near the interface of the buried insulator layer and the active semiconductor layer. A diffusion barrier layer is formed between the impurities and an upper surface of the active semiconductor layer. The diffusion barrier layer prevents the impurities from diffusing therethrough.

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