The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 04, 2011
Filed:
May. 01, 2008
Qingqing Liang, Fishkill, NY (US);
Huilong Zhu, Poughkeepsie, NY (US);
Gregory G. Freeman, Hopewell Junction, NY (US);
Qingqing Liang, Fishkill, NY (US);
Huilong Zhu, Poughkeepsie, NY (US);
Gregory G. Freeman, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The present invention, in one embodiment, provides a semiconductor device including a semiconducting body including a schottky barrier region at a first end of the semiconducting body, a drain dopant region at the second end of the semiconducting body, and a channel positioned between the schottky barrier region and the drain dopant region. The semiconducting device may further include a gate structure overlying the channel of the semiconducting body. Further, a drain contact may be present to the drain dopant region of the semiconducting body, the drain contact being composed of a conductive material and in direct physical contact with a portion of a sidewall of the semiconducting body having a dimension that is less than a thickness of the semiconducting body in which the drain dopant region is positioned.