The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 07, 2010
Filed:
Jul. 10, 2008
Huilong Zhu, Poughkeepsie, NY (US);
Xiaomeng Chen, Poughkeepsie, NY (US);
Mahender Kumar, Fishkill, NY (US);
Brian J. Greene, Wappingers Falls, NY (US);
Bachir Dirahoui, Bedford Hills, NY (US);
Jay W. Strane, Warwick, NY (US);
Gregory G. Freeman, Hopewell Junction, NY (US);
Huilong Zhu, Poughkeepsie, NY (US);
Xiaomeng Chen, Poughkeepsie, NY (US);
Mahender Kumar, Fishkill, NY (US);
Brian J. Greene, Wappingers Falls, NY (US);
Bachir Dirahoui, Bedford Hills, NY (US);
Jay W. Strane, Warwick, NY (US);
Gregory G. Freeman, Hopewell Junction, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Methods for forming high performance gates in MOSFETs and structures thereof are disclosed. One embodiment includes a method including providing a substrate including a first short channel active region, a second short channel active region and a long channel active region, each active region separated from another by a shallow trench isolation (STI); and forming a field effect transistor (FET) with a polysilicon gate over the long channel active region, a first dual metal gate FET having a first work function adjusting material over the first short channel active region and a second dual metal gate FET having a second work function adjusting material over the second short channel active region, wherein the first and second work function adjusting materials are different.