The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2017
Filed:
Feb. 03, 2015
Globalfoundries Inc., Grand Cayman, KY (US);
Daniel J. Poindexter, Cornwall-on-Hudson, NY (US);
Gregory G. Freeman, Wappingers Falls, NY (US);
Siyuranga O. Koswatta, Carmel, NY (US);
J. Campbell Scott, Los Gatos, CA (US);
Leon J. Sigal, Monsey, NY (US);
James D. Warnock, Somers, NY (US);
GLOBALFOUNDRIES INC., Grnd Cayman, KY;
Abstract
An efficient method of calculating maximum current limits for library gates in which a current limit includes the impact of self-heating effects associated with the maximum current. A maximum current solution is obtained in a self-consistent fashion, providing a way of determining the self-consistent solution in a rapid fashion without extensive numerical calculations or simulations. The present method provides a practical approach for characterizing a large library of gates for use in CMOS designs.