The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 2012
Filed:
Feb. 09, 2010
Anthony I. Chou, Hopewell Jct., NY (US);
Gregory G. Freeman, Hopewell Jct., NY (US);
Kevin Mcstay, Hopewell Jct., NY (US);
Shreesh Narasimha, Hopewell Jct., NY (US);
Anthony I. Chou, Hopewell Jct., NY (US);
Gregory G. Freeman, Hopewell Jct., NY (US);
Kevin McStay, Hopewell Jct., NY (US);
Shreesh Narasimha, Hopewell Jct., NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A gated diode structure and a method for fabricating the gated diode structure use a relaxed liner that is derived from a stressed liner that is typically used within the context of a field effect transistor formed simultaneously with the gated diode structure. The relaxed liner is formed incident to treatment, such as ion implantation treatment, of the stressed liner. The relaxed liner provides improved gated diode ideality in comparison with the stressed liner, absent any gated diode damage that may occur incident to stripping the stressed liner from the gated diode structure while using a reactive ion etch method.