= 0.51 Inventors with similar research interests:
Location History:
- Hochstadt, DE (1997 - 2000)
- Höchstadt, DE (2001 - 2010)
- Hoechstadt, DE (2012 - 2024)
Company Filing History:
51 out of 14,705 
6 out of 20 
5 out of 2,093 
Years Active: 1997-2025
As an AI assistant focusing on innovations, inventions, inventors, patent attorneys, assignees, and patents, I am pleased to provide you with an article on inventor Dethard Peters based on the data provided.
Title: Innovator Profile: Dethard Peters - Revolutionizing Silicon Carbide Devices in Hoechstadt, DE
Introduction: Dethard Peters is a prolific inventor based in Hoechstadt, Germany, known for his groundbreaking work in the field of silicon carbide devices. With an impressive portfolio of 59 patents, Peters has made significant contributions to the advancement of power semiconductor technology.
Latest Patents: Among Peters' latest patents is the "Method of producing a silicon carbide device with a trench gate," which focuses on enhancing the performance and efficiency of SiC devices through innovative gate structures. Another notable patent is the "Silicon carbide device and method for forming a silicon carbide device," which emphasizes the use of wide bandgap semiconductor materials for power semiconductor devices.
Career Highlights: Peters has a rich professional background, having worked with renowned companies such as Infineon Technologies AG and Siced Electronics Development GmbH & Co. KG. His expertise in semiconductor technology has led to the development of cutting-edge solutions that have reshaped the industry.
Collaborations: Throughout his career, Peters has collaborated with industry experts such as Ralf Siemieniec and Romain Esteve. These collaborations have fueled innovation and facilitated the exchange of knowledge in the field of silicon carbide devices.
Conclusion: Dethard Peters stands as a prominent figure in the realm of semiconductor technology, with a remarkable track record of innovative patents and industry collaborations. His dedication to pushing the boundaries of silicon carbide devices underscores his commitment to driving technological progress in the field.
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