The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2025
Filed:
Mar. 10, 2022
Applicant:
Infineon Technologies Ag, Neubiberg, DE;
Inventors:
Dethard Peters, Hoechstadt, DE;
Guang Zeng, Haar, DE;
Assignee:
INFINEON TECHNOLOGIES AG, Neubiberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2005.12); H01L 27/06 (2005.12); H01L 29/16 (2005.12);
U.S. Cl.
CPC ...
H01L 27/0288 (2012.12); H01L 27/0629 (2012.12); H01L 29/1608 (2012.12);
Abstract
An apparatus includes a junction termination edge, a unipolar power transistor, and an RC snubber. The RC snubber has a capacitor between a poly silicon structure and a semiconductor substrate, and part of the junction termination edge. The capacitor has a p-n junction. The RC snubber has a poly silicon resistor between a source of the unipolar power transistor and a first layer forming the capacitor. The unipolar transistor and the RC snubber are coupled in parallel. The RC snubber and the unipolar power transistor are formed monolithically on the semiconductor substrate.