Guang Zeng

Title: Biography of Inventor Guang Zeng

Introduction: Guang Zeng is a prominent inventor based in Haar, Germany, known for his significant contributions to the field of semiconductor technology. He holds a total of six patents, showcasing his innovative approach to electronic devices.

Latest Patents: One of his latest patents is a semiconductor device with a diode chain connected to gate metallization. This invention includes a transistor cell with a source region of a first conductivity type and a gate electrode, formed in a wide bandgap semiconductor portion. The diode chain consists of multiple diode structures that are electrically connected in series, enhancing the device's performance. Another notable patent is an RC snubber with a poly silicon resistor and capacitor formed from a junction termination edge. This apparatus integrates a unipolar power transistor and an RC snubber, designed to improve the efficiency of semiconductor devices.

Career Highlights: Guang Zeng has worked with leading companies in the semiconductor industry, including Infineon Technologies Austria AG and Infineon Technologies AG. His experience in these organizations has allowed him to develop cutting-edge technologies that have advanced the field.

Collaborations: Throughout his career, Guang has collaborated with notable colleagues such as Anton Mauder and Moritz Hauf. These partnerships have contributed to the successful development of innovative semiconductor solutions.

Conclusion: Guang Zeng's work in semiconductor technology has made a lasting impact on the industry