The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 27, 2023

Filed:

Dec. 14, 2020
Applicant:

Infineon Technologies Austria Ag, Villach, AT;

Inventors:

Guang Zeng, Haar, DE;

Anton Mauder, Kolbermoor, DE;

Joachim Weyers, Hoehenkirchen, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01);
Abstract

A single chip power semiconductor device includes: first and second load terminals; a semiconductor body integrated in the single chip and coupled to the load terminals and configured to conduct a load current along a load current path between the load terminals; a control terminal and at least one control electrode electrically connected thereto, the at least one control electrode being electrically insulated from the semiconductor body and configured to control the load current based on a control voltage between the control terminal and the first load terminal; a protection structure integrated, separately from the load current path, in the single chip and including a series connection of pn junctions with first semiconductor regions of a first conductivity type and second semiconductor regions of a second conductivity type. The series connection of the pn-junctions is connected in forward bias between the control terminal and the first load terminal.


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