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Erlangen, Germany

Siced Electronics Development Gmbh & Co Kg

USPTO Granted Patents = 20

% Expired Patents = 20.0

EPO Patents = 2

Forward Citations = 425

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17 inventors (with patents filed for the assignee):

Heinz Mitlehner (11 out of 42 patents)

Peter Friedrichs (10 out of 21 patents)

Dietrich Stephani (9 out of 23 patents)

4. Dethard Peters (6 out of 66 patents)

5. Reinhold Schörner (6 out of 7 patents)

6. Alexandre Ellison (3 out of 7 patents)

7. Björn Magnusson (3 out of 6 patents)

8. Asko Vehanen (3 out of 3 patents)

9. Reinhold Schörner (3 out of 6 patents)

10. Wolfgang Bartsch (3 out of 6 patents)

11. Roland Rupp (2 out of 131 patents)

12. Rudolf Elpelt (2 out of 42 patents)

13. Arno Wiedenhofer (2 out of 3 patents)

14. Reinhold Schoerner (1 out of 7 patents)

15. Ulrich Weinert (1 out of 6 patents)

20 patents: Sort by Forward Citations

1. 8803160 - Lightly doped silicon carbide wafer and use thereof in high power devices (2014-08-12),

2. 8097524 - Lightly doped silicon carbide wafer and use thereof in high power devices (2012-01-17),

3. 7646026 - SiC-PN power diode (2010-01-12),

4. 7615802 - Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structure (2009-11-10),

5. 7482068 - Lightly doped silicon carbide wafer and use thereof in high power devices (2009-01-27),

6. 7071503 - Semiconductor structure with a switch element and an edge element (2006-07-04),

7. 6936850 - Semiconductor device made from silicon carbide with a Schottky contact and an ohmic contact made from a nickel-aluminum material (2005-08-30),

8. 6822842 - Switching device for switching at a high operating voltage (2004-11-23),

9. 6815351 - Method for contacting a semiconductor configuration (2004-11-09),

10. 6740167 - Device for mounting a substrate and method for producing an insert for a susceptor (2004-05-25),

11. 6693322 - Semiconductor construction with buried island region and contact region (2004-02-17),

12. 6693314 - Junction field-effect transistor with more highly doped connecting region (2004-02-17),

13. 6653666 - J-FET semiconductor configuration (2003-11-25),

14. 6468890 - Semiconductor device with ohmic contact-connection and method for the ohmic contact-connection of a semiconductor device (2002-10-22),

15. 6365494 - Method for producing an ohmic contact (2002-04-02),

Company Overview

Siced Electronics Development GmbH & Co KG is a technology company based in Erlangen, Germany, specializing in the development and manufacturing of advanced electronic systems. The organization focuses on innovative solutions in the fields of automotive engineering, industrial automation, and telecommunications. With a commitment to research and development, Siced Electronics aims to enhance the efficiency and functionality of electronic applications, catering to a diverse range of industries and contributing to technological advancements in the region.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 6 2026

20 Patents

#14 in Erlangen

#2,216 in Germany

#31,233 in the World

Erlangen, Germany

Siced Electronics Development Gmbh & Co Kg

Forward Citations = 425

17 inventors:

Heinz Mitlehner (11 out of 42 patents)

Peter Friedrichs (10 out of 21 patents)

Dietrich Stephani (9 out of 23 patents)

4. Dethard Peters (6 out of 66 patents)

5. Reinhold Schörner (6 out of 7 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Siced Electronics Development Gmbh & Co Kg. Retrieved from https://idiyas.com/company/siced-electronics-development-and-co-kg

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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