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Erlangen, Germany

Siced Electronics Development Gmbh & Co Kg

USPTO Granted Patents = 20

EPO Patents = 2

Forward Citations = 423

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17 inventors (with patents filed for the assignee):

Heinz Mitlehner (11 out of 42 patents)

Peter Friedrichs (10 out of 21 patents)

Dietrich Stephani (9 out of 23 patents)

4. Dethard Peters (6 out of 65 patents)

5. Reinhold Schörner (6 out of 7 patents)

6. Alexandre Ellison (3 out of 7 patents)

7. Björn Magnusson (3 out of 6 patents)

8. Asko Vehanen (3 out of 3 patents)

9. Reinhold Schörner (3 out of 6 patents)

10. Wolfgang Bartsch (3 out of 6 patents)

11. Roland Rupp (2 out of 129 patents)

12. Rudolf Elpelt (2 out of 39 patents)

13. Arno Wiedenhofer (2 out of 3 patents)

14. Reinhold Schoerner (1 out of 7 patents)

15. Ulrich Weinert (1 out of 6 patents)

20 patents: Sort by Forward Citations

1. 8803160 - Lightly doped silicon carbide wafer and use thereof in high power devices (2014-08-12),

2. 8097524 - Lightly doped silicon carbide wafer and use thereof in high power devices (2012-01-17),

3. 7646026 - SiC-PN power diode (2010-01-12),

4. 7615802 - Semiconductor structure comprising a highly doped conductive channel region and method for producing a semiconductor structure (2009-11-10),

5. 7482068 - Lightly doped silicon carbide wafer and use thereof in high power devices (2009-01-27),

6. 7071503 - Semiconductor structure with a switch element and an edge element (2006-07-04),

7. 6936850 - Semiconductor device made from silicon carbide with a Schottky contact and an ohmic contact made from a nickel-aluminum material (2005-08-30),

8. 6822842 - Switching device for switching at a high operating voltage (2004-11-23),

9. 6815351 - Method for contacting a semiconductor configuration (2004-11-09),

10. 6740167 - Device for mounting a substrate and method for producing an insert for a susceptor (2004-05-25),

11. 6693322 - Semiconductor construction with buried island region and contact region (2004-02-17),

12. 6693314 - Junction field-effect transistor with more highly doped connecting region (2004-02-17),

13. 6653666 - J-FET semiconductor configuration (2003-11-25),

14. 6468890 - Semiconductor device with ohmic contact-connection and method for the ohmic contact-connection of a semiconductor device (2002-10-22),

15. 6365494 - Method for producing an ohmic contact (2002-04-02),

Company Badge

USPTO Data Jan 1 1976 - Dec 9 2025

20 Patents

#14 in Erlangen

#2,238 in Germany

#30,316 in the World

Erlangen, Germany

Siced Electronics Development Gmbh & Co Kg

Forward Citations = 423

17 inventors:

Heinz Mitlehner (11 out of 42 patents)

Peter Friedrichs (10 out of 21 patents)

Dietrich Stephani (9 out of 23 patents)

4. Dethard Peters (6 out of 65 patents)

5. Reinhold Schörner (6 out of 7 patents)

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