The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2014
Filed:
Dec. 29, 2011
Alexandre Ellison, Linköping, SE;
Björn Magnusson, Linköping, SE;
Asko Vehanen, Esbo, FI;
Dietrich Stephani, Bubenreuth, DE;
Heinz Mitlehner, Uttenreuth, DE;
Peter Friedrichs, Nürnberg, DE;
Alexandre Ellison, Linköping, SE;
Björn Magnusson, Linköping, SE;
Asko Vehanen, Esbo, FI;
Dietrich Stephani, Bubenreuth, DE;
Heinz Mitlehner, Uttenreuth, DE;
Peter Friedrichs, Nürnberg, DE;
Siced Electronics Development GmbH & Co. KG, Erlangen, DE;
Norstel AB, Linköping, SE;
Abstract
A semiconductor device including a drift zone of a first conductivity type serving as a substrate layer having a front side and a back side. A first contact electrode is arranged at the front side of the drift zone. A control region is arranged at the front side and controls an injection of carriers of at least the first conductivity type into the drift zone. A second contact electrode is arranged at the backside of the drift zone. The drift zone is arranged to carry a carrier flow between the first and the second contact electrode. The drift zone includes a silicon carbide wafer with a net carrier concentration less than 10cmand a carrier lifetime of at least 50 ns.