Bubenreuth, Germany

Dietrich Stephani

This inventor holds 23 USPTO granted patents and 1 EPO patent, primarily in Silicon Carbide Semiconductors. Top assignees: Siemens Aktiengesellschaft, Siced Electronics Development Gmbh & Co Kg, Norstel Ab. Active years: 1988-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Dietrich Stephani. Retrieved from https://idiyas.com/inventor/dietrich-stephani

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 87.0


Average Co-Inventor Count = 3.0

ph-index = 13

Forward Citations = 470(Granted Patents)


Location History:

  • Erlangen, DE (1988 - 1989)
  • Bubenreuth, DE (1990 - 2014)

Company Filing History:


Years Active: 1988-2014

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Areas of Expertise:
Silicon Carbide
Power Diode
Hybrid MOSFET
Junction Field-Effect Transistor
Ohmic Contact
Current Limiting Device
Magnetic Storage
Thin Film Magnet Head
Edge Termination
Sublimation Growing
Semiconductor Configuration
23 patents (USPTO):Explore Patents

Title: Dietrich Stephani: Pioneer in Silicon Carbide Technologies

Introduction

Dietrich Stephani is a notable inventor based in Bubenreuth, Germany, renowned for his significant contributions to semiconductor technology. With a total of 23 patents to his name, Stephani has focused particularly on innovations involving silicon carbide wafers, greatly impacting high power devices.

Latest Patents

Among his latest achievements, Stephani has developed a method for creating lightly doped silicon carbide wafers that are vital in high power device applications. His patent outlines a semiconductor device featuring a drift zone of a first conductivity type. This device includes crucial components such as a front and back contact electrode, facilitating efficient carrier flow between them. His innovation emphasizes a silicon carbide wafer with a net carrier concentration of less than 10 cm⁻³ and a carrier lifetime of at least 50 ns, pushing the boundaries of what is possible in semiconductor applications.

Moreover, his work extends to a method for manufacturing silicon carbide single crystals. His process ensures the growth of crystals with a boron concentration less than 5×10⁶ cm⁻³ and minimizes intrinsic defects, such as silicon or carbon vacancies. By annealing the crystal under specific atmospheric conditions, he successfully decreases intrinsic defects to achieve a desirable carrier lifetime of at least 50 ns at room temperature.

Career Highlights

Dietrich Stephani's career includes key roles in prominent companies such as Siemens Aktiengesellschaft and Siced Electronics Development GmbH & Co. KG. His innovative mindset and dedication to research have allowed him to pioneer developments in the semiconductor field, translating theoretical concepts into practical, implementable technologies.

Collaborations

Throughout his career, Stephani has collaborated with fellow professionals in his field, including notable coworkers like Heinz Mitlehner and Peter Friedrichs. These collaborations have enabled knowledge exchange and the advancement of technologies, further solidifying his reputation as an expert in high power devices.

Conclusion

Dietrich Stephani's contributions to silicon carbide technologies position him as a leading figure in the semiconductor industry. With an impressive portfolio of patents and substantial career achievements, he continues to influence innovations in high power devices, paving the way for future advancements in the field. His work not only showcases his inventive spirit but also highlights the importance of collaboration in driving technological progress.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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