The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 12, 2010
Filed:
Sep. 19, 2006
Peter Friedrichs, Nürnberg, DE;
Dethard Peters, Höchstadt, DE;
Reinhold Schörner, Grossenseebach, DE;
Dietrich Stephani, Bubenreuth, DE;
Peter Friedrichs, Nürnberg, DE;
Dethard Peters, Höchstadt, DE;
Reinhold Schörner, Grossenseebach, DE;
Dietrich Stephani, Bubenreuth, DE;
SiCED Electronics Development GmbH & Co. KG, Erlangen, DE;
Abstract
An integrated vertical SiC—PN power diode has a highly doped SiC semiconductor body of a first conductivity type, a low-doped drift zone of the first conductivity type, arranged above the semiconductor body on the emitter side, an emitter zone of a second conductivity type, applied to the drift zone, and at least one thin intermediate layer of the first conductivity type. The intermediate layer is arranged inside the drift zone, has a higher doping concentration than the drift zone, and divides the drift zone into at least one first anode-side drift zone layer and at least one second cathode-side drift zone layer. There is also disclosed a circuit configuration with such SiC—PN power diodes.