The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2002
Filed:
Mar. 02, 2001
Wolfgang Bartsch, Erlangen, DE;
Reinhold Schörner, Grossenseebach, DE;
Dietrich Stephani, Bubenreuth, DE;
Siced Electronics Development GmbH & Co. KG, Erlangen, DE;
Abstract
The disclosed semiconductor device comprises an ohmic contact between a semiconductor region made of n-conducting silicon carbide and a largely homogeneous ohmic contact layer ( ), which adjoins the semiconductor region and is made of a material having a first and a second material component. A silicide formed from the first material component and the silicon of the silicon carbide and a carbide formed from the second material component and the carbon of the silicon carbide are contained in a junction region between the semiconductor region and the ohmic contact layer. The silicide and carbide formation take place at maximum 1000° C.