The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2000
Filed:
Sep. 28, 1999
Applicant:
Inventors:
Dethard Peters, Hochstadt, DE;
Reinhold Schorner, Grossenseebach, DE;
Dietrich Stephani, Bubenreuth, DE;
Assignee:
Siemens Aktiengesellschaft, Munich, DE;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
257 77 ; 257628 ;
Abstract
An SiC channel region of a semiconductor configuration, as a result of misoriented epitaxial growth on its surface, is formed with mutually parallel elevations. The flow of electric current in the channel region is set parallel with the elevations. As a result, a high degree of charge-carrier mobility in the channel region is obtained.
Peters, Dethard. (2000). Silicon carbide semiconductor configuration with a high degree of (U.S. Patent No. 6097039). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6097039
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile