The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2004
Filed:
Jun. 22, 2001
Applicant:
Inventors:
Assignee:
SiCed Electronics Development GmbH & Co. KG, Erlangen, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/980 ;
U.S. Cl.
CPC ...
H01L 2/980 ;
Abstract
A junction field-effect transistor containing a semiconductor region with an inner region is described. In addition, a first and a second connecting region, respectively, are disposed within the semiconductor region. The first connecting region has the same conductivity type as the inner region, but in a higher doping concentration. The second connecting region has the opposite conductivity type to that of the inner region. This reduces the forward resistance while at the same time maintaining a high reverse voltage strength.
Mitlehner, Heinz. (2004). Junction field-effect transistor with more highly doped connecting region (U.S. Patent No. 6693314). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6693314
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile